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GATE MT: Physical Metallurgy

GATE MT · Work through your exam, one topic at a time.

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Physical Metallurgy

Physical Metallurgy tests structure-property relationships: crystallography, defects, solidification, phase diagrams, phase transformations, heat treatment, and strengthening mechanisms. Expect questions that move from a crystal structure or phase diagram to an observed property.

Core rules

  • Miller indices (hkl) for planes and [uvw] for directions; in cubic crystals, [hkl] is normal to (hkl) only for cubic symmetry.
  • FCC has 4 atoms/cell and APF 0.74; BCC has 2 atoms/cell and APF 0.68; HCP has 6 atoms/cell and APF 0.74.
  • Point, line, and planar defects control diffusion and strength. Grain boundaries strengthen via Hall-Petch: σy=σ0+k d^(−1/2).
  • Phase rule F=C−P+2 for pressure and temperature variables. Lever rule uses tie-line endpoints at the same temperature.
  • Solidification: nucleation and growth; constitutional undercooling can cause dendritic or cellular growth.
  • TTT diagrams describe isothermal transformations; CCT diagrams describe continuous cooling. They are not interchangeable.

Worked example

A tensile stress of 100 MPa is applied to a crystal. The slip plane normal is at 45° to the stress axis and the slip direction is also at 45° in the plane. Schmid factor m=cosφ cosλ=cos45° cos45°=0.5. Resolved shear stress τ=σm=100×0.5=50 MPa. If the critical resolved shear stress is 50 MPa, slip begins at this applied stress; if it is 60 MPa, slip does not begin.

Traps

  • Interchanging Miller indices and direction indices.
  • Using the wrong tie-line endpoints for the lever rule.
  • Applying equilibrium phase fractions to a rapidly cooled non-equilibrium microstructure.
  • Confusing TTT and CCT curves.
  • Forgetting that Hall-Petch is valid only above a lower grain-size limit.