Tamil Nadu HSE Second Year Basic Electronics Engineering study plan
Tamil Nadu HSE Second Year Basic Electronics Engineering · Give each week a clear focus.
8 weeks · About 6 hours per week
Semiconductor Devices and PN Junction
Describe the behaviour of intrinsic and extrinsic semiconductors, and sketch the energy-band diagram for n-type and p-type material.
Draw and label the depletion region of an unbiased PN junction, then repeat for forward and reverse bias.
Derive the diode current equation from the Shockley relation and calculate forward current for a given saturation current and voltage.
Solve numeric problems on diode resistance (static and dynamic) and on barrier potential for silicon and germanium.
Explain the working of a Zener diode in reverse breakdown and select a series resistor for a simple shunt regulator.
Your checkpoint
A one-page hand-drawn sheet containing the unbiased, forward-biased and reverse-biased PN junction diagrams plus 10 solved numericals (5 on diode current, 5 on Zener regulator design), self-checked against your textbook answers.
Semiconductor Devices and PN Junction & Bipolar Junction Transistors and Biasing
Compare half-wave, full-wave centre-tap and bridge rectifiers on ripple factor, PIV, efficiency and output frequency.
Calculate the required filter capacitor for a given ripple voltage and load current.
Draw the input and output characteristics of a BJT in CE configuration and mark the cutoff, active and saturation regions.
Compute alpha, beta and gamma from each other, and relate collector current to base current using leakage terms.
Locate the DC load line on a CE output characteristic and mark the Q-point for a given circuit.
Your checkpoint
A rectifier comparison table (4 topologies x 5 parameters) with worked values, plus a plotted CE output characteristic with load line and Q-point drawn on graph paper and photographed or scanned.
Bipolar Junction Transistors and Biasing
Design a fixed-bias and a voltage-divider-bias circuit for a specified Q-point and verify the operating point by calculation.
Explain why voltage-divider bias gives better stability against temperature and beta variation than base bias.
Compute the stability factor S for at least two bias arrangements and interpret the result.
Draw the small-signal hybrid model of a CE amplifier and calculate voltage gain, input impedance and output impedance.
Identify the cause of distortion from a clipped output waveform and propose a bias correction.
Your checkpoint
A bias-design worksheet showing two complete designs (component values, Q-point, stability factor, expected gain) with a short written justification of which design you would build and why.
Field Effect Transistors and Amplifiers & Operational Amplifiers and Applications
Distinguish JFET and MOSFET construction, and explain how gate voltage controls drain current in each.
Plot the transfer characteristic of a JFET from given IDSS and VGS(off) values, and mark the pinch-off point.
Explain the parameters of an ideal op-amp (infinite gain, infinite input impedance, zero output impedance) and derive the closed-loop gain of inverting and non-inverting configurations.
Calculate output voltage for summing, difference and integrator circuits using the ideal op-amp assumptions.
Describe the significance of slew rate, CMRR and offset voltage when choosing an op-amp for a given application.
Your checkpoint
A formula card listing JFET relations and all standard op-amp configurations with gain expressions, plus 8 solved circuit numericals (4 FET, 4 op-amp) with the arithmetic shown.
Digital Electronics and Logic Families
Convert between binary, octal, hexadecimal and decimal numbers, and perform 2's complement subtraction.
State and apply the truth tables of AND, OR, NOT, NAND, NOR, XOR and XNOR gates.
Simplify Boolean expressions using algebraic rules and Karnaugh maps up to four variables.
Implement any given Boolean expression using only NAND gates, and separately using only NOR gates.
Compare TTL and CMOS logic families on propagation delay, power dissipation, fan-out and noise margin.
Your checkpoint
A Karnaugh-map portfolio: 6 expressions minimised by hand with the K-map drawn, each result then re-implemented in NAND-only form and verified against the truth table.
Combinational and Sequential Logic Circuits
Design and truth-table a half adder and full adder, then cascade two full adders into a 2-bit adder.
Explain the working of a 4-to-1 multiplexer and a 1-to-4 demultiplexer, and use a multiplexer to realise a given logic function.
Trace the output waveforms of SR, JK, D and T flip-flops for a given clock and input sequence.
Explain the difference between latches and edge-triggered flip-flops and state the race-around problem in JK flip-flops.
Draw the block diagram of a 4-bit ripple counter and calculate its modulus and output frequency division.
Your checkpoint
A timing-diagram exercise sheet: one clock waveform with input sequences for JK and D flip-flops, with your hand-drawn output waveforms and a labelled ripple counter diagram.
Communication Systems and Modulation & Power Electronics and Control Devices
Define modulation and explain why it is needed, then compare AM, FM and PM on bandwidth, noise immunity and circuit complexity.
Calculate modulation index, sideband frequencies and total power for an AM wave from given carrier and modulating values.
Describe the working of an AM envelope detector and an FM discriminator at block level.
Explain the construction, principle and V-I characteristic of an SCR, and state how it is turned on and off.
Compare SCR, TRIAC, DIAC and UJT by symbol, triggering method and typical application.
Your checkpoint
A two-part summary sheet: an AM/FM comparison table with 6 solved modulation numericals, and a power-device table covering SCR, TRIAC, DIAC and UJT with their symbols drawn and one application each.
Electronic Measuring Instruments and Transducers & Microcontrollers, Embedded Basics and Practical Applications
Explain the working principle of a moving-coil galvanometer and how it is converted into an ammeter and a voltmeter, with shunt and multiplier calculations.
Describe the construction and use of CRO, digital multimeter and LVDT, and state what each measures.
List the architecture blocks of the 8051 microcontroller and explain the roles of the ALU, program counter, stack pointer and special function registers.
Write short 8051 assembly snippets for data transfer, addition and delay loops, and describe a simple embedded application such as traffic-light or temperature control.
Attempt a full-length timed mock test covering all ten domains and classify every wrong answer by domain.
Your checkpoint
A completed timed mock paper (full syllabus, exam duration) with a scored answer key and a written error log listing each mistake, its domain and the corrective action for the final revision week.
Milestones
Week 2: You can draw both PN junction bias diagrams and a CE characteristic from memory, and correctly answer 8 of 10 mixed numericals on diodes and rectifiers without notes.
Week 4: You can state the Q-point of a voltage-divider bias circuit and the gain of an inverting op-amp amplifier in under two minutes each, and score at least 70% on a self-made 20-question test covering Domains 1-4.
Week 6: You can minimise a four-variable Boolean expression by K-map and trace flip-flop output waveforms correctly for an unseen input sequence, scoring at least 70% on a 20-question test covering Domains 5-6.
Week 8: You complete the full mock paper within exam time and score at least 60%, with no single domain contributing more than one third of your total errors.